参数资料
型号: GS8160E32
厂商: GSI TECHNOLOGY
英文描述: 16Mb(512K x 36Bit)Sync Burst SRAM(16M位(512K x 36位)同步静态RAM(带2位脉冲地址计数器))
中文描述: 16Mb的(为512k × 36Bit)同步突发静态存储器(1,600位(为512k × 36位)同步静态随机存储器(带2位脉冲地址计数器))
文件页数: 16/26页
文件大小: 519K
代理商: GS8160E32
Rev: 2.07 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
16/26
1999, Giga Semiconductor, Inc.
Preliminary
GS8160E18/32/36T-225/200/180/166/150/133
AC Electrical Characteristics
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Parameter
Symbol
-225
-200
-180
-166
-150
-133
Unit
Min
4.4
1.5
Max
2.5
Min
5.0
1.5
Max
3.0
Min
5.5
1.5
Max
3.2
Min
6.0
1.5
Max
3.5
Min
6.7
1.5
Max
3.8
Min
7.5
1.5
Max
4.0
Pipeline
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
tKC
tKQ
tKQX
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tKC
tKQ
tKQX
1.5
1.5
1.5
1.5
1.5
1.5
ns
Flow
Through
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
8.5
3.0
7.0
10.0
3.0
7.5
10.0
3.0
8.0
10.0
3.0
8.5
10.0
3.0
10.0
15.0
3.0
11.0
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tKH
tKL
3.0
3.0
3.0
3.0
3.0
3.0
ns
Clock HIGH Time
Clock LOW Time
1.3
1.5
1.3
1.5
1.3
1.5
1.3
1.5
1.5
1.7
1.7
2
ns
ns
Clock to Output in High-Z
tHZ
1
tOE
1.5
2.5
1.5
3.0
1.5
3.2
1.5
3.5
1.5
3.8
1.5
4.0
ns
G to Output Valid
2.5
3.2
3.2
3.5
3.8
4.0
ns
G to output in Low-Z
tOLZ
1
0
0
0
0
0
0
ns
G to output in High-Z
tOHZ
1
tS
tH
2.5
3.0
3.2
3.5
3.8
4.0
ns
Setup time
Hold time
1.5
0.5
1.5
0.5
1.5
0.5
1.5
0.5
1.5
0.5
1.5
0.5
ns
ns
ZZ setup time
tZZS
2
5
5
5
5
5
5
ns
ZZ hold time
tZZH
2
tZZR
1
1
1
1
1
1
ns
ZZ recovery
100
100
100
100
100
100
ns
相关PDF资料
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