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| 型号： | GS8160E32 |
| 厂商： | GSI TECHNOLOGY |
| 英文描述： | 16Mb（512K x 36Bit）Sync Burst SRAM(16M位（512K x 36位）同步静态RAM(带2位脉冲地址计数器)) |
| 中文描述： | 16Mb的（为512k × 36Bit）同步突发静态存储器（1,600位（为512k × 36位）同步静态随机存储器（带2位脉冲地址计数器）） |
| 文件页数： | 8/26页 |
| 文件大小： | 519K |
| 代理商： | GS8160E32 |
Rev: 2.07 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
8/26
1999, Giga Semiconductor, Inc.
Preliminary
GS8160E18/32/36T-225/200/180/166/150/133
Byte Write Truth Table
Note:
1.
2.
3.
4.
All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
Byte Write Enable inputs B
A
, B
B
, B
C
and/or B
D
may be used in any combination with BW to write single or multiple bytes.
All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
Bytes “
C
” and “
D
” are only available on the x32 and x36 versions.
Function
GW
BW
B
A
B
B
B
C
B
D
Notes
Read
H
H
X
X
X
X
1
Read
H
L
H
H
H
H
1
Write byte a
H
L
L
H
H
H
2, 3
Write byte b
H
L
H
L
H
H
2, 3
Write byte c
H
L
H
H
L
H
2, 3, 4
Write byte d
H
L
H
H
H
L
2, 3, 4
Write all bytes
H
L
L
L
L
L
2, 3, 4
Write all bytes
L
X
X
X
X
X
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|---|---|
| GS8160E32BGT-150 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 16MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays |
| GS8160E32BGT-150I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays |
| GS8160E32BGT-150IV | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays |
| GS8160E32BGT-150V | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays |
| GS8160E32BGT-200 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX32 6.5NS/3NS 100TQFP - Trays 制造商:GSI 功能描述: |
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