型号: | GS8161E36D-200I |
厂商: | Electronic Theatre Controls, Inc. |
元件分类: | DRAM |
英文描述: | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
中文描述: | 1M×18,512k×32,512k×36 18M位同步突发静态存储器 |
文件页数: | 10/36页 |
文件大小: | 939K |
代理商: | GS8161E36D-200I |
相关PDF资料 |
PDF描述 |
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GS8161E36D-225 | 25-Bit Configurable Registered Buffer With Address-Parity Test 96-LFBGA 0 to 70 |
GS8161Z18D-250I | 14-Bit Registered Buffer With SSTL_2 Inputs and Outputs 48-TVSOP 0 to 70 |
GS8161Z18D-250IT | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
GS8161Z18D-250T | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
GS8161Z18T-133 | 13-Bit to 26-Bit Registered Buffer with SSTL_2 Inputs and Outputs 56-VQFN 0 to 70 |
相关代理商/技术参数 |
参数描述 |
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GS8161E36D-225 | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
GS8161E36D-225I | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
GS8161E36D-250 | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
GS8161E36D-250I | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
GS8161E36DD-150 | 制造商:GSI Technology 功能描述:165 BGA - Bulk |