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参数资料
| 型号： | GS8161V36CGD-333I |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | DRAM |
| 英文描述： | 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs |
| 中文描述： | 512K X 36 CACHE SRAM, 4.5 ns, PBGA165 |
| 封装： | 13 X 15 MM, 1 MM PITCH, LEAD FREE, FBGA-165 |
| 文件页数： | 14/28页 |
| 文件大小： | 584K |
| 代理商： | GS8161V36CGD-333I |
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GS8161V18/36CD-333/300/250
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 2/2005
14/28
2004, GSI Technology
Operating Currents
Notes:
1.
2.
I
DD
and I
DDQ
apply to any combination of V
DD
and V
DDQ
operation.
All parameters listed are worst case scenario.
Parameter
Test Conditions
Mode
Symbol
-333
-300
-250
Unit
0
to
70°C
–
40
to
85°C
0
to
°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
Operating
Current
Device Selected;
All other inputs
≥
V
IH
o
r
≤
V
IL
Output
open
(x36)
Pipeline
I
DD
I
DDQ
385
50
395
50
345
45
355
45
290
40
300
40
mA
Flow Through
I
DD
I
DDQ
300
35
310
35
240
30
250
30
220
20
230
20
mA
(x18)
Pipeline
I
DD
I
DDQ
345
30
355
30
310
25
320
25
260
20
270
20
mA
Flow Through
I
DD
I
DDQ
260
20
270
20
215
15
225
15
200
10
210
10
mA
Standby
Current
ZZ
≥
V
DD
– 0.2 V
—
Pipeline
I
SB
40
50
40
50
40
50
mA
Flow Through
I
SB
40
50
40
50
40
50
mA
Deselect
Current
Device Deselected;
All other inputs
≥
V
IH
or
≤
V
IL
—
Pipeline
I
DD
85
90
85
90
85
90
mA
Flow Through
I
DD
60
65
60
65
60
65
mA
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