参数资料
型号: GS8161Z18BD-200V
厂商: GSI TECHNOLOGY
元件分类: DRAM
英文描述: 18Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述: 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
封装: 13 X 15 MM, 1 MM PITCH, FPBGA-165
文件页数: 13/35页
文件大小: 790K
代理商: GS8161Z18BD-200V
GS8161ZxxB(T/D)-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01a 6/2006
13/35
2004, GSI Technology
High Z
(Data In)
Data Out
(Q Valid)
High Z
B W
B
R
B
D
R
W
R
W
D
D
Current State (n)
Next State (n+1)
Transition
Input Command Code
Key
Notes:
1. The Hold command (CKE Low) is not
shown because it prevents any state change.
2. W, R, B, and D represent input command
codes as indicated in the Truth Tables.
Clock (CK)
Command
Current State
Next State
n
n+1
n+2
n+3
Current State and Next State Definition for:
Pipeline and Flow through Read Write Control State Diagram
Flow Through Mode Data I/O State Diagram
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