参数资料
型号: GS8161Z18BD-200V
厂商: GSI TECHNOLOGY
元件分类: DRAM
英文描述: 18Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述: 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
封装: 13 X 15 MM, 1 MM PITCH, FPBGA-165
文件页数: 15/35页
文件大小: 790K
代理商: GS8161Z18BD-200V
Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
GS8161ZxxB(T/D)-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01a 6/2006
15/35
2004, GSI Technology
Burst Counter Sequences
BPR 1999.05.18
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GS8161Z18BD-250IV 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z18BD-250V 18Mb Pipelined and Flow Through Synchronous NBT SRAM
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GS8161Z18BGD-150V 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z18BGD-200IV 18Mb Pipelined and Flow Through Synchronous NBT SRAM
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GS8161Z18BD-250 制造商:GSI 制造商全称:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
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