参数资料
型号: GS8161Z18BT-250IV
厂商: GSI TECHNOLOGY
元件分类: DRAM
英文描述: 18Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述: 1M X 18 ZBT SRAM, 5.5 ns, PQFP100
封装: TQFP-100
文件页数: 11/35页
文件大小: 790K
代理商: GS8161Z18BT-250IV
GS8161ZxxB(T/D)-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01a 6/2006
11/35
2004, GSI Technology
Deselect
New Read
New Write
Burst Read
Burst Write
W
R
B
R
B
W
D
D
B
B
W
R
D
B
W
R
D
D
Current State (n)
Next State (n+1)
Transition
Input Command Code
Key
Notes:
1. The Hold command (CKE Low) is not
shown because it prevents any state change.
2. W, R, B, and D represent input command
codes as indicated in the Synchronous Truth Table.
Clock (CK)
Command
Current State
Next State
n
n+1
n+2
n+3
Current State and Next State Definition for
Pipelined and Flow Through Read/Write Control State Diagram
W
R
Pipelined and Flow Through Read Write Control State Diagram
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GS8161Z18BT-250V 制造商:GSI 制造商全称:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z18BT-V 制造商:GSI 制造商全称:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
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GS8161Z18D-133I 制造商:未知厂家 制造商全称:未知厂家 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z18D-133IT 制造商:GSI 制造商全称:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM