参数资料
型号: GS8662R08GE-333I
厂商: GSI TECHNOLOGY
元件分类: DRAM
英文描述: 72Mb SigmaCIO DDR-II Burst of 4 SRAM
中文描述: 8M X 8 DDR SRAM, 0.45 ns, PBGA165
封装: 15 MM X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件页数: 3/37页
文件大小: 942K
代理商: GS8662R08GE-333I
4M x 18 SigmaCIO DDR-II SRAM—Top View
1
2
3
4
5
6
7
8
9
10
11
A
CQ
SA
SA
R/W
BW1
K
NC
LD
SA
SA
CQ
B
NC
DQ9
NC
SA
NC
K
BW0
SA
NC
NC
DQ8
C
NC
NC
NC
V
SS
SA
SA0
SA1
V
SS
NC
DQ7
NC
D
NC
NC
DQ10
V
SS
V
SS
V
SS
V
SS
V
SS
NC
NC
NC
E
NC
NC
DQ11
V
DDQ
V
SS
V
SS
V
SS
V
DDQ
NC
NC
DQ6
F
NC
DQ12
NC
V
DDQ
V
DD
V
SS
V
DD
V
DDQ
NC
NC
DQ5
G
NC
NC
DQ13
V
DDQ
V
DD
V
SS
V
DD
V
DDQ
NC
NC
NC
H
Doff
V
REF
V
DDQ
V
DDQ
V
DD
V
SS
V
DD
V
DDQ
V
DDQ
V
REF
ZQ
J
NC
NC
NC
V
DDQ
V
DD
V
SS
V
DD
V
DDQ
NC
DQ4
NC
K
NC
NC
DQ14
V
DDQ
V
DD
V
SS
V
DD
V
DDQ
NC
NC
DQ3
L
NC
DQ15
NC
V
DDQ
V
SS
V
SS
V
SS
V
DDQ
NC
NC
DQ2
M
NC
NC
NC
V
SS
V
SS
V
SS
V
SS
V
SS
NC
DQ1
NC
N
NC
NC
DQ16
V
SS
SA
SA
SA
V
SS
NC
NC
NC
P
NC
NC
DQ17
SA
SA
C
SA
SA
NC
NC
DQ0
R
TDO
TCK
SA
SA
SA
C
SA
SA
SA
TMS
TDI
11 x 15 Bump BGA—13 x 15 mm
2
Body—1 mm Bump Pitch
Notes:
1.
2.
BW0 controls writes to DQ0:DQ8; BW1 controls writes to DQ9:DQ17
MCL = Must Connect Low
Preliminary
GS8662R08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
3/37
2005, GSI Technology
相关PDF资料
PDF描述
GS8662R09E-167 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R09E-167I 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R09E-200 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R09E-200I 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R09E-250 72Mb SigmaCIO DDR-II Burst of 4 SRAM
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GS8662R09E-167 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R09E-167I 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
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