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参数资料
| 型号： | GS880F32AGT-5.5IT |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | SRAM |
| 英文描述： | 256K X 32 CACHE SRAM, 5.5 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 6/23页 |
| 文件大小： | 573K |
| 代理商： | GS880F32AGT-5.5IT |
GS880F18/32/36AT-5.5/6/6.5/7/7.5/8.5
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 11/2004
14/23
2001, GSI Technology
Note:
These parameters are sample tested.
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 2.5 V)
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
CIN
VIN = 0 V
45
pF
Input/Output Capacitance
CI/O
VOUT = 0 V
67
pF
AC Test Conditions
Parameter
Conditions
Input high level
VDD – 0.2 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
VDD/2
Output reference level
VDDQ/2
Output load
Fig. 1
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Device is deselected as defined by the Truth Table.
50% tKC
VSS – 2.0 V
50%
VSS
VIH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
50% tKC
VDD + 2.0 V
50%
VDD
VIL
DQ
VDDQ/2
50
30pF*
Output Load 1
* Distributed Test Jig Capacitance
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