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参数资料
| 型号： | GS880F32AGT-5.5IT |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | SRAM |
| 英文描述： | 256K X 32 CACHE SRAM, 5.5 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 8/23页 |
| 文件大小： | 573K |
| 代理商： | GS880F32AGT-5.5IT |
GS880F18/32/36AT-5.5/6/6.5/7/7.5/8.5
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 11/2004
16/23
2001, GSI Technology
Notes:
1.
I DD
a
nd
I DDQ
apply
to
an
ycombination
of
V
DD3
,V
DD2
,V
DD
Q
3,
and
V
DDQ2
operation.
2.
All
p
arameters
listed
are
worst
case
scenario.
Operating
Currents
Par
ameter
Test
Co
nd
itio
ns
Mo
de
Sym
bo
l
-250
-225
-200
-166
-150
-133
Un
it
0
to
70°C
–
40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70
°C
–40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70°C
–40
to
85°C
Operating
Current
Devi
ce
Selec
ted;
All
other
input
s
≥V
IH
o
r≤
V
IL
Output
open
(x32/
x36)
Flow
Through
I DD I DDQ
18
0
20
190
20
170
20
180
20
165
15
175
15
155
15
165
15
150
15
16
0
15
140
10
150
10
mA
(x18)
Flow
Through
I DD I DDQ
16
5
10
175
10
155
10
165
10
150
10
160
10
140
10
150
10
135
10
14
5
10
125
10
135
10
mA
Standby
Current
ZZ
≥
V
DD
–
0.2
V
—
Pipeline
I SB
20
30
20
30
20
30
20
30
20
30
20
30
mA
Flow
Through
I SB
20
30
20
30
20
30
20
30
20
30
20
30
mA
Des
elect
Current
Dev
ice
D
eselec
ted;
All
other
input
s
≥
V
IH
or
≤V
IL
—
Pipeline
I DD
85
90
80
85
75
80
64
70
60
65
50
55
mA
Flow
Through
I DD
60
65
60
65
50
55
50
55
50
55
45
50
mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| GS880F32AT-5.5 | 制造商:GSI 制造商全称:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs |
| GS880F32AT-5.5I | 制造商:GSI 制造商全称:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs |
| GS880F32AT-6 | 制造商:GSI 制造商全称:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs |
| GS880F32AT-6.5 | 制造商:GSI 制造商全称:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs |
| GS880F32AT-6.5I | 制造商:GSI 制造商全称:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs |
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