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参数资料
| 型号： | GS880F32BGT-7IT |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | SRAM |
| 英文描述： | 256K X 32 CACHE SRAM, 7 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 4/22页 |
| 文件大小： | 621K |
| 代理商： | GS880F32BGT-7IT |
Rev: 1.00b 12/2002
12/22
2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS880F18/32/36BT-5.5/6/6.5/7/7.5/8.5
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
VDD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
VDD2
2.3
2.5
2.7
V
3.3 V VDDQ I/O Supply Voltage
VDDQ3
3.0
3.3
3.6
V
2.5 V VDDQ I/O Supply Voltage
VDDQ2
2.3
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2.
Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
VDDQ3 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
2.0
—
VDD + 0.3
V1
VDD Input Low Voltage
VIL
–0.3
—
0.8
V
1
VDDQ I/O Input High Voltage
VIHQ
2.0
—
VDDQ + 0.3
V1,3
VDDQ I/O Input Low Voltage
VILQ
–0.3
—
0.8
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2.
Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3.
VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
VDDQ2 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
0.6*VDD
—
VDD + 0.3
V1
VDD Input Low Voltage
VIL
–0.3
—
0.3*VDD
V1
VDDQ I/O Input High Voltage
VIHQ
0.6*VDD
—
VDDQ + 0.3
V1,3
VDDQ I/O Input Low Voltage
VILQ
–0.3
—
0.3*VDD
V1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2.
Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3.
VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
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相关代理商/技术参数 |
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| GS880F32BT-4.5 | 制造商:GSI 制造商全称:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
| GS880F32BT-4.5I | 制造商:GSI 制造商全称:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
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| GS880F32BT-5.5 | 制造商:GSI 制造商全称:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
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