- 您现在的位置：买卖IC网 > PDF目录385340 > GS881E18AT-166IT (GSI TECHNOLOGY) 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs PDF资料下载
参数资料
| 型号： | GS881E18AT-166IT |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | DRAM |
| 英文描述： | 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs |
| 中文描述： | 512K X 18 CACHE SRAM, 7 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 16/37页 |
| 文件大小： | 662K |
| 代理商： | GS881E18AT-166IT |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页当前第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页
GS881E18/36AT-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 11/2004
8/29
2001, GSI Technology
Synchronous Truth Table
Operation
Address Used
State
Diagram
Key
5
E
1
ADSP
ADSC
ADV
W
3
DQ
4
Deselect Cycle, Power Down
None
X
H
X
L
X
X
High-Z
Read Cycle, Begin Burst
External
R
L
L
X
X
X
Q
Read Cycle, Begin Burst
External
R
L
H
L
X
F
Q
Write Cycle, Begin Burst
External
W
L
H
L
X
T
D
Read Cycle, Continue Burst
Next
CR
X
H
H
L
F
Q
Read Cycle, Continue Burst
Next
CR
H
X
H
L
F
Q
Write Cycle, Continue Burst
Next
CW
X
H
H
L
T
D
Write Cycle, Continue Burst
Next
CW
H
X
H
L
T
D
Read Cycle, Suspend Burst
Current
X
H
H
H
F
Q
Read Cycle, Suspend Burst
Current
H
X
H
H
F
Q
Write Cycle, Suspend Burst
Current
X
H
H
H
T
D
Write Cycle, Suspend Burst
Current
H
X
H
H
T
D
Notes:
1.
2.
3.
X = Don’t Care, H = High, L = Low
W = T (True) and F (False) is defined in the Byte Write Truth Table preceding.
G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown
as “Q” in the Truth Table above).
All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish
basic synchronous or synchronous burst operations and may be avoided for simplicity.
Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See
BOLD
items above.
Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See
ITALIC
items above.
4.
5.
6.
相关PDF资料 |
PDF描述 |
|---|---|
| GS881E18AT-166T | 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs |
| GS881E18AT-200 | 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs |
| GS881E18AT-200I | 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs |
| GS881E18AT-200IT | 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs |
| GS881E32AD-225T | 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GS881E18AT-166T | 制造商:GSI 制造商全称:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs |
| GS881E18AT-200 | 制造商:GSI 制造商全称:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs |
| GS881E18AT-200I | 制造商:GSI 制造商全称:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs |
| GS881E18AT-200IT | 制造商:GSI 制造商全称:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs |
| GS881E18AT-200T | 制造商:GSI 制造商全称:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs |
发布紧急采购，3分钟左右您将得到回复。