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参数资料
| 型号： | GS881Z18T-66 |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | DRAM |
| 英文描述： | 8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| 中文描述： | 512K X 18 ZBT SRAM, 18 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 15/34页 |
| 文件大小： | 542K |
| 代理商： | GS881Z18T-66 |
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Rev: 1.10 8/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
15/34
1998, Giga Semconductor, Inc.
Preliminary
.
GS881Z18/36T-11/100/80/66
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute MaximumRatings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute MaximumRatings, for an extended period of time, may affect reliability of
this component.
Notes:
1.
Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 2.75 V
≤
V
DDQ
≤
2.375 V
(i.e., 2.5 V I/O) and 3.6 V
≤
V
DDQ
≤
3.135 V (i.e., 3.3 V I/O), and quoted at whichever condition is worst case.
This device features input buffers compatible with both 3.3 V and 2.5 V I/O drivers.
Most speed grades and configurations of this device are offered in both Commercial and Industrial Temperature ranges. The part number of
Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated
for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be –2 V > Vi < V
DD
+2 V with a pulse width not to exceed 20% tKC.
2.
3.
4.
Symbol
V
DD
V
DDQ
V
CK
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
T
BIAS
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–0.5 to 4.6
V
–0.5 to V
DD
V
Voltage on Clock Input Pin
–0.5 to 6
V
Voltage on I/O Pins
–0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–0.5 to V
DD
+0.5 (
≤
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/–20
mA
Output Current on Any I/O Pin
+/–20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–55 to 125
o
C
Temperature Under Bias
–55 to 125
o
C
Recommended Operating Conditions
Parameter
Symbol
Mn.
Typ.
Max.
Unit
Notes
Supply Voltage
V
DD
3.135
3.3
3.6
V
I/O Supply Voltage
V
DDQ
2.375
2.5
V
DD
V
1
Input High Voltage
V
IH
1.7
—
V
DD
+0.3
V
2
Input Low Voltage
V
IL
–0.3
—
0.8
V
2
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
3
Ambient Temperature (Industrial Range Versions)
T
A
–40
25
85
°
C
3
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相关代理商/技术参数 |
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|---|---|
| GS881Z18T-66I | 制造商:GSI 制造商全称:GSI Technology 功能描述:8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS881Z18T-80 | 制造商:GSI 制造商全称:GSI Technology 功能描述:8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS881Z18T-80I | 制造商:GSI 制造商全称:GSI Technology 功能描述:8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS881Z32BD-150 | 制造商:GSI 制造商全称:GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS881Z32BD-150I | 制造商:未知厂家 制造商全称:未知厂家 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM |
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