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| 型号： | GS881Z18T-66 |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | DRAM |
| 英文描述： | 8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| 中文描述： | 512K X 18 ZBT SRAM, 18 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 17/34页 |
| 文件大小： | 542K |
| 代理商： | GS881Z18T-66 |
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Rev: 1.10 8/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
17/34
1998, Giga Semconductor, Inc.
Preliminary
.
GS881Z18/36T-11/100/80/66
AC Test Conditions
Notes:
1.
2.
3.
4.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
Output Load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
Device is deselected as defined by the Truth Table.
Parameter
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
Output load
Conditions
2.3 V
0.2 V
1 V/ns
1.25 V
1.25 V
Fig. 1& 2
DC Electrical Characteristics
Parameter
Input Leakage Current
(except mode pins)
Symbol
Test Conditions
Mn
Max
I
IL
V
IN
= 0 to V
DD
–1 uA
1 uA
ZZ Input Current
I
INZZ
V
DD
≥
V
IN
≥
V
IH
0 V
≤
V
IN
≤
V
IH
V
DD
≥
V
IN
≥
V
IL
0 V
≤
V
IN
≤
V
IL
Output Disable,
V
OUT
= 0 to V
DD
I
OH
= –8 mA, V
DDQ
= 2.375 V
I
OH
= –8 mA, V
DDQ
= 3.135 V
I
OL
= 8 mA
–1 uA
–1 uA
1 uA
300 uA
Mode Pin Input Current
I
INM
–300 uA
–1 uA
1 uA
1 uA
Output Leakage Current
I
OL
–1 uA
1 uA
Output High Voltage
V
OH
V
OH
V
OL
1.7 V
—
Output High Voltage
2.4 V
—
Output Low Voltage
—
0.4 V
DQ
VT = 1.25 V
50
30pF
*
DQ
2.5 V
Output Load 1
Output Load 2
225
225
5pF
*
*Distributed Test Jig Capacitance
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