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参数资料
| 型号： | GSA684 |
| 厂商： | GTM CORPORATION |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 进步党外延平面晶体管 |
| 文件页数： | 1/1页 |
| 文件大小： | 153K |
| 代理商： | GSA684 |
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1/1
ISSUED DATE :2003/10/24
REVISED DATE :2004/11/29B
L
e 1
b
e
S E A T IN G
P L A N E
b 1
A
D
C
S 1
E
TO-92
G
G S
S A
A668844
P
P N
N P
P E
E P
P II T
T A
A X
X II A
A LL P
P LL A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GSA684 is designed for power amplifier and driver.
Features
*Low collector to emitter saturation voltage VCE(sat).
*Complementary pair with GSC1384
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
4.45
4.7
D
4.44
4.7
S1
1.02
-
E
3.30
3.81
b
0.36
0.51
L
12.70
-
b1
0.36
0.76
e1
1.150
1.390
C
0.36
0.51
e
2.42
2.66
Absolute Maximum Ratings (Ta = 25 : ,unless otherwise specified)
Parameter
Ratings
Unit
Collector to Base Voltage
VCBO
-60
V
Collector to Emitter Voltage
VCEO
-50
V
Emitter to Base Voltage
VEBO
-5
V
Collect Current(DC)
IC
-1
A
Collect Current*(Pulse)
ICP
-1.5
A
Junction Temperature
Tj
+150
Storage Temperature Range
TsTG
-55 ~ +150
Total Power Dissipation
PD
1
W
ELECTRICAL Characteristics (Ta = 25 : ,unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
VCBO
-60
-
V
IC=-10uA,IE=0
VCEO
-50
-
V
IC=-2mA,IB=0
VEBO
-5
-
V
IE=-10uA,IC=0
ICBO
-
-0.1
uA
VCB=-20V,IE=0
VCE(sat)
-
-200
-400
mV
lC=-0.5A,IB=-50mA(note)
VBE(sat)
-
-0.85
-1.2
V
IC=-0.5A, IB=-50mA(note)
*hFE1
85
160
340
VCE=-10V,IC=-500mA(note)
*hFE2
50
100
-
VCE=-5V,IC=-1A(note)
fT
-
200
-
MHz
VCE=-10V,IB=-50mA,f=200MHz
Cob
-
11
20
pF
VCB=-10V,IE=0,f=1MHz
Note: Pulse measurement
Classification Of hFE1
Rank
Q
R
S
Range
85-170
120-240
170-340
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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