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参数资料
| 型号： | GSB772SS |
| 厂商： | GTM CORPORATION |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 进步党外延平面晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 285K |
| 代理商： | GSB772SS |
GSB772SS
Page: 1/3
ISSUED DATE :2005/11/07
REVISED DATE :
G
G S
S B
B 777722S
S S
S
P
P N
N P
P E
E P
P II T
T A
A X
X II A
A LL P
P LL A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GSB772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter
and voltage regulator.
Features
&High current output up to -3A
&Low saturation voltage
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
2.70
3.10
G
1.90 REF.
B
2.40
2.80
H
1.00
1.30
C
1.40
1.60
K
0.10
0.20
D
0.35
0.50
J
0.40
-
E
0
0.10
L
0.85
1.15
F
0.45
0.55
M
0°
10°
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature Range
TsTG
-55 ~ +150
Collector to Base Voltage
VCBO
-40
V
Collector to Emitter Voltage
VCEO
-30
V
Emitter to Base Voltage
VEBO
-5
V
Collect Current(DC)
IC
-3
A
Total Power Dissipation
PD
750
mW
Electrical Characteristics(Ta = 25 : )
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
V
IC=-100uA, IE=0
BVCEO
-30
-
V
IC=-1mA, IB=0
BVEBO
-5
-
V
IE=-10uA, IC=0
ICBO
-
-1
uA
VCB=-30V, IE=0
IEBO
-
-1
uA
VEB=-3V, IC=0
*VCE(sat)
-
-0.5
V
IC=-2A, IB=-200mA
*VBE(sat)
-
-1.0
-2.0
V
IC=-2A, IB=-200mA
*hFE1
30
-
VCE=-2V, IC=-20mA
*hFE2
100
-
500
VCE=-2V, IC=-1A
fT
-
80
-
MHz
VCE=-5V, IC=-100mA, f=100MHz
Cob
-
55
-
pF
VCB=-10V, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Classification Of hFE2
Rank
Q
P
E
Range
100 - 200
160 - 320
200 - 500
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