参数资料
型号: GSBAS16
厂商: GTM CORPORATION
英文描述: SURFACE MOUNT, SWITCHING DIODE
中文描述: 表面贴装,开关二极管
文件页数: 1/2页
文件大小: 129K
代理商: GSBAS16
CORPORATION
GSBAS16
Page: 1/2
ISSUED DATE :2006/12/12
REVISED DATE :
G
G S
S B
B A
AS
S 1166
S
S U
U R
R F
F A
A C
C E
E M
M O
O U
U N
N T
T ,, S
S W
W II T
T C
C H
H II N
N G
G D
D II O
O D
D E
E
V O L T A G E 8 5 V, C U R R E N T 2 5 0 m A
Description
The GSBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits.
The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount
package.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
Absolute Maximum Ratings at TA = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
:
Storage Temperature
Tstg
-65 ~ +150
:
Reverse Voltage
VR
85
V
Repetitive Reverse Voltage
VRRM
85
V
Forward Current
IO
250
mA
Repetitive Forward Current
IFM
500
mA
Forward Surge Current (1ms)
IFSM
1000
mA
Total Power Dissipation
PD
225
mW
Electrical Characteristics (at TA = 25 : unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
V(BR)
85
-
V
IR=100uA
VF(1)
-
715
mV
IF=1mA
VF(2)
-
855
mV
IF=10mA
VF(3)
-
1000
mV
IF=50mA
Forward Voltage
VF(4)
-
1250
mV
IF=150mA
Reverse Current
IR
-
1
uA
VR=85V
Total Capacitance
CT
2
pF
VR=0, f=1MHz
Reverse Recovery Time
Trr
-
6
nS
IF=IR=10mA, RL=100 measured at IR=1mA
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