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参数资料
| 型号： | GSBAS40 |
| 厂商： | GTM CORPORATION |
| 英文描述： | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| 中文描述： | 表面贴装肖特基势垒二极管 |
| 文件页数： | 1/2页 |
| 文件大小： | 222K |
| 代理商： | GSBAS40 |
CORPORATION
GSBAS40
Page: 1/2
ISSUED DATE :2005/12/20
REVISED DATE :
G
G S
S B
B A
AS
S 4400 tth
h rru
u G
G S
S B
B A
A S
S 4400--0066
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O L T A G E 4 0 V, C U R R E N T 0 . 2 A
Description
These schottky barrier diodes are designed for high speed switching applications, circuit protection and voltage
clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is
excellent for hand held and portable applications where space is limited.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BCS.
Absolute Maximum Ratings at TA = 25 ::::
Parameter
Symbol
Ratings
Unit
Operating Junction Temperature
Tj
-55 ~ +125
:
Storage Temperature
Tstg
-55 ~ +150
:
Maximum Repetitive Peak Reverse Voltage
VRRM
40
V
Thermal Resistance Junction to Ambient Air
R JA
445
: /W
Peak Forward Surge Current at tp < 1.0s
IFSM
0.6
A
Maximum Average Forward Rectified Current
Io
0.2
A
Total Power Dissipation
PD
225
mW
Electrical Characteristics (at TA = 25 : unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
V(BR)R
40
-
V
IR=10 A
-
380
IF1=1mA
Forward Voltage(tp < 300uS)
VF
-
1000
mV
IF2=40mA
Reverse Leakage Current
IR
-
200
nA
VR=30V
Total Capacitance
CT
-
5.0
pF
VR=0V, f=1MHz
Reverse Recover Time
Trr
-
5.0
ns
IF=IR=10mA, RL=100 , Irr=1mA
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相关代理商/技术参数 |
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| GSBAS70 | 制造商:GTM 制造商全称:GTM 功能描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE |
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| GSBAT54 | 制造商:GTM 制造商全称:GTM 功能描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE |
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