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参数资料
| 型号： | GSBAS70S |
| 厂商： | GTM CORPORATION |
| 英文描述： | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| 中文描述： | 表面贴装肖特基势垒二极管 |
| 文件页数： | 1/2页 |
| 文件大小： | 183K |
| 代理商： | GSBAS70S |
CORPORATION
GSAS70/A/C/S
Page: 1/2
ISSUED DATE :2005/12/29
REVISED DATE :
G
G S
S B
B A
AS
S 7700// A
A//C
C //S
S
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O L T A G E 7 0 V, C U R R E N T 7 0 m A
Description
These Schottky barrier diodes are designed for high speed switching applications, circuit protection and
voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is
excellent for hand held and portable applications where space is limited.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BCS.
Absolute Maximum Ratings at TA = 25 ::::
Parameter
Symbol
Ratings
Unit
Operating Junction Temperature
Tj
+125
:
Storage Temperature
Tstg
-65 ~ +125
:
Maximum Repetitive Peak Reverse Voltage
VRRM
70
V
Maximum Average Forward Rectified Current
Io
70
mA
Non- Repetitive Peak Forward Surge Current @ tp 1.0s
IFSM
100
mA
Thermal Resistance Junction to Ambient Air
R JA
445
: /W
Total Power Dissipation
PD
225
mW
Electrical Characteristics (at TA = 25 : unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
V(BR)R
70
-
V
IR=10 A
-
410
IF1=1mA
-
750
IF1=10mA
Forward Voltage
VF
-
1000
mV
IF2=15mA
-
100
nA
VR1=50V
Reverse Leakage Current
IR
-
10
uA
VR2=70V
Total Capacitance
CT
-
2.0
pF
VR=0V, f=1MHz
Reverse Recover Time
Trr
-
5.0
ns
IF=IR=10mA, RL=100 , Irr=1mA
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