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参数资料
| 型号： | GSBAT54S |
| 厂商： | GTM CORPORATION |
| 英文描述： | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| 中文描述： | 表面贴装肖特基势垒二极管 |
| 文件页数： | 1/2页 |
| 文件大小： | 351K |
| 代理商： | GSBAT54S |
1/2
ISSUED DATE :2005/01/05
REVISED DATE :
G
G S
S B
B A
AT
T 5544//A
A//C
C //S
S
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O L T A G E 3 0 V, C U R R E N T 2 0 0 m A
Description
These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BCS.
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
-55 ~ +125
Storage Temperature
Tstg
-55 ~ +150
Peak Repetitive Reverse Voltage
VR
30
V
Forward Continuous Current
IF
200
mA
Peak Repetitive Forward Current
IFRM
300
mA
Surge Forward Current(t 1.0s)
IFSM
600
mA
Total Power Dissipation at Ta = 25 :
PD
225
mW
Characteristics at Ta = 25 ::::
characteristics
Symbol
Min
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
V(BR)R
30
-
V
IR=10 A
VF(1)
-
240
mV
IF=0.1mA
VF(2)
-
320
mV
IF=1mA
VF(3)
-
400
mV
IF=10mA
VF(4)
-
500
mV
IF=30mA
Forward Voltage
VF(5)
-
1000
mV
IF=100mA
Reverse Leakage Current
IR
-
2.0
A
VR=25V
Total Capacitance
CT
-
10
pF
VR=1V, f=1MHz
Reverse Recover Time
Trr
-
5
ns
IF=IR=10mA, IR(Rec)=1mA
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