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参数资料
| 型号： | GSBAV99W |
| 厂商： | GTM CORPORATION |
| 英文描述： | SURFACE MOUNT, SWITCHING DIODE |
| 中文描述： | 表面贴装，开关二极管 |
| 文件页数： | 1/2页 |
| 文件大小： | 170K |
| 代理商： | GSBAV99W |
1/2
ISSUED DATE :2004/09/24
REVISED DATE :
G
G S
S B
B A
AV
V 9999W
W
S
S U
U R
R F
F A
A C
C E
E M
M O
O U
U N
N T
T ,, S
S W
W II T
T C
C H
H II N
N G
G D
D II O
O D
D E
E
V O L T A G E 8 5 V, C U R R E N T 0 . 1 5 A
Description
The GSBAV99W is designed for ultra high speed switching.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
! :
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Maximum Peak Repetitive Reverse Voltage
VRRM
85
V
Maximum RMS Voltage
VRMS
60
V
Maximum DC Blocking Voltage
VDC
75
V
Peak Forward Surge Current at 1uSec
IFSM
4.0
A
Typical Junction Capacitance between Terminal (Note 1)
CJ
1.5
pF
Maximum Reverse Recovery Time(Note 2)
TRR
4.0
nSec
Maximum Average Forward Rectified Current
Io
0.15
A
Total Power Dissipation
PD
250
mW
Characteristics at Ta = 25 ::::
Characteristics
Symbol
Typ.
Unit
Test Condition
Maximum Instantaneous Forward Voltage
VF
1.25
V
IF = 150mA
Maximum Average Reverse Current
IR
1.0
uA
VR = 75V
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volt.
2. Measured at applied forward current of 5mA and reverse voltage of 10.0 volt.
3. ESD sensitive product handling required.
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