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参数资料
| 型号： | GSBC857 |
| 厂商： | GTM CORPORATION |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 进步党外延平面晶体管 |
| 文件页数： | 1/2页 |
| 文件大小： | 158K |
| 代理商： | GSBC857 |
1/2
ISSUED DATE :2005/01/21
REVISED DATE :2006/01/18B
G
G S
S B
B C
C 885577
P
P N
N P
P E
E P
P II T
T A
A X
X II A
A L
L P
P L
L A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GSBC857 is designed for switching and AF amplifier application suitable for automatic insertion in thick and thin-film circuits.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
-50
V
Collector to Emitter Voltage
VCEO
-45
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current
IC
-100
mA
Total Power Dissipation
PD
225
mW
Characteristics at Ta = 25 ::::
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-50
-
V
IC=-100uA
BVCEO
-45
-
V
IC=-1mA
BVEBO
-6
-
V
IE=-10uA
ICBO
-
-15
nA
VCB=-30V
VCE(sat)1
-
-90
-300
mV
IC=-10mA, IB=-0.5mA
VCE(sat)2
-
-250
-650
mV
IC=-100mA, IB=-5mA
VBE(sat)1
-
-700
-
mV
IC=-10mA, IB=-0.5mA
VBE(sat)2
-
-900
-
mV
IC=-100mA, IB=-5mA
VBE(on)1
-600
-
-750
mV
VCE=-5V, IC=-2mA
VBE(on)2
-
-800
mV
VCE=-5V, IC=-10mA
hFE
110
-
800
VCE=-5V, IC=-2mA
fT
-
150
-
MHz
VCE=-5V, IC=-10mA
Cob
-
6
pF
VCB=-10V, f=1MHz, IE=0A
Classification Of hFE
Rank
9BA
9BB
9BC
Range
110 - 220
200 - 450
420 - 800
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