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参数资料
| 型号： | GSC1473A |
| 厂商： | GTM CORPORATION |
| 英文描述： | NPN SILICON TRANSISTOR |
| 中文描述： | NPN硅晶体管 |
| 文件页数： | 1/2页 |
| 文件大小： | 147K |
| 代理商： | GSC1473A |
1/2
ISSUED DATE :2005/04/15
REVISED DATE :2006/03/21B
G
G S
S C
C 11447733A
A
N
N P
P N
N S
S II L
L II C
C O
O N
N T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GSC1473A is designed for general amplification.
Features
&High Collector to Emitter Voltage VCEO
&
High Transition Frequency fT
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
4.45
4.7
D
4.44
4.7
S1
1.02
-
E
3.30
3.81
b
0.36
0.51
L
12.70
-
b1
0.36
0.76
e1
1.150
1.390
C
0.36
0.51
e
2.42
2.66
Absolute Maximum Ratings (TA=25 )
::::
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
300
V
Collector to Emitter Voltage
VCEO
300
V
Emitter to Base Voltage
VEBO
7
V
Peak Collector Current
ICP
100
mA
Collector Current (continuous)
IC
70
mA
Total Device Dissipation
PD
750
mW
Junction Temperature
TJ
150
:
Storage Temperature
Tstg
-55 ~ +150
:
Electrical Characteristics (TA = 25 : unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
300
-
V
IC=100uA, IE=0
BVCEO
300
-
V
IC=1mA, IB=0
BVEBO
7
-
V
IE=1uA, IC=0
ICEO
-
1
uA
VCE=120V
VCE(sat)
-
1.2
V
IC=50mA, IB=5mA
hFE
30
-
220
VCE=10V, IC=5mA
fT
50
80
-
MHz
VCE=10V, IC=-10mA, f=200MHz
Cob
-
10
pF
VCB=10V, f=1MHz
Classification Of hFE
Rank
P
Q
R
hFE
30 ~ 100
60 ~ 150
100 ~ 220
L
e 1
b
e
S E A T IN G
P L A N E
b 1
A
D
C
S 1
E
TO-92
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