- 您现在的位置：买卖IC网 > PDF目录60615 > GSC4407 (GTM CORPORATION) P-CHANNEL ENHANCEMENT MODE POWER MOSFET PDF资料下载
参数资料
| 型号： | GSC4407 |
| 厂商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P沟道增强型功率MOSFET |
| 文件页数： | 2/4页 |
| 文件大小： | 310K |
| 代理商： | GSC4407 |
GSC4407
Page: 2/4
ISSUED DATE :2006/04/20
REVISED DATE :
Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-30
-
V
VGS=0, ID=-250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
-0.015
-
V/ :
Reference to 25 : , ID=-1mA
Gate Threshold Voltage
VGS(th)
-1.0
-
-3.0
V
VDS=VGS, ID=-250uA
Forward Transconductance
gfs
-
13
-
S
VDS=-10V, ID=-10A
Gate-Source Leakage Current
IGSS
-
±100
nA
VGS=±25V
Drain-Source Leakage Current(Tj=25 : )
-
-1
uA
VDS=-30V, VGS=0
Drain-Source Leakage Current(Tj=70 : )
IDSS
-
-25
uA
VDS=-24V, VGS=0
-
14
VGS=-10V, ID=-10A
Static Drain-Source On-Resistance2
RDS(ON)
-
20
m
VGS=-4.5V, ID=-5A
Total Gate Charge2
Qg
-
29
46
Gate-Source Charge
Qgs
-
6
-
Gate-Drain (“Miller”) Change
Qgd
-
14
-
nC
ID=-10.7A
VDS=-24V
VGS=-4.5V
Turn-on Delay Time2
Td(on)
-
15
-
Rise Time
Tr
-
12
-
Turn-off Delay Time
Td(off)
-
100
-
Fall Time
Tf
-
70
-
ns
VDS=-15V
ID=-1A
VGS=-10V
RG=3.3
RD=15
Input Capacitance
Ciss
-
2600
4100
Output Capacitance
Coss
-
500
-
Reverse Transfer Capacitance
Crss
-
370
-
pF
VGS=0V
VDS=-25V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
-1.2
V
IS=-10.7A, VGS=0V
Reverse Recovery Time
Trr
-
31
-
ns
Reverse Recovery Charge
Qrr
-
25
-
nC
IS=-10.7A, VGS=0V
dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125 /W when mounted on Min. copper pad.
:
相关PDF资料 |
PDF描述 |
|---|---|
| GSC4409 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4410 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4411DY | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4411 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4412 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GSC4409 | 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4410 | 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4411 | 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4411DY | 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4412 | 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
发布紧急采购，3分钟左右您将得到回复。