参数资料
型号: GSC4407
厂商: GTM CORPORATION
英文描述: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: P沟道增强型功率MOSFET
文件页数: 3/4页
文件大小: 310K
代理商: GSC4407
GSC4407
Page: 3/4
ISSUED DATE :2006/04/20
REVISED DATE :
Characteristics Curve
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
相关PDF资料
PDF描述
GSC4409 P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSC4410 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSC4411DY P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSC4411 P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSC4412 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
相关代理商/技术参数
参数描述
GSC4409 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSC4410 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSC4411 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSC4411DY 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSC4412 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET