参数资料
型号: GSC7811
厂商: GTM CORPORATION
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: N沟道增强型功率MOSFET
文件页数: 1/5页
文件大小: 300K
代理商: GSC7811
GSC7811
Page: 1/5
ISSUED DATE :2006/01/10
REVISED DATE :
G
G S
S C
C 77881111
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GSC7811 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Low On-resistance
*Fast Switching Characteristic
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
5.80
6.20
M
0.10
0.25
B
4.80
5.00
H
0.35
0.49
C
3.80
4.00
L
1.35
1.75
D
J
0.375 REF.
E
0.40
0.90
K
45°
F
0.19
0.25
G
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
25
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current3
ID @TA=25 :
11.8
A
Continuous Drain Current3
ID @TA=70 :
9.4
A
Pulsed Drain Current1
IDM
30
A
Total Power Dissipation
PD @TA=25 :
2.5
W
Linear Derating Factor
0.02
W/ :
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3
Max.
Rthj-amb
50
: /W
BVDSS
25V
RDS(ON)
12m
ID
11.8A
Pb Free Plating Product
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