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参数资料
| 型号： | GSC7811 |
| 厂商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N沟道增强型功率MOSFET |
| 文件页数： | 2/5页 |
| 文件大小： | 300K |
| 代理商： | GSC7811 |
GSC7811
Page: 2/5
ISSUED DATE :2006/01/10
REVISED DATE :
Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
25
-
V
VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
0.1
-
V/ :
Reference to 25 : , ID=1mA
Gate Threshold Voltage
VGS(th)
0.5
-
1.2
V
VDS=VGS, ID=250uA
Forward Transconductance
gfs
-
30
-
S
VDS=15V, ID=11.8A
Gate-Source Leakage Current
IGSS
-
±100
nA
VGS= ±12V
Drain-Source Leakage Current(Tj=25 : )
-
1
uA
VDS=25V, VGS=0
Drain-Source Leakage Current(Tj=70 )
:
IDSS
-
25
uA
VDS=20V, VGS=0
Static Drain-Source On-Resistance2
RDS(ON)
-
10
12
m
VGS=4.5V, ID=11.8A
Total Gate Charge2
Qg
-
32
-
Gate-Source Charge
Qgs
-
2.6
-
Gate-Drain (“Miller”) Change
Qgd
-
15.5
-
nC
ID=11.8A
VDS=20V
VGS=5V
Turn-on Delay Time2
Td(on)
-
12
-
Rise Time
Tr
-
28
-
Turn-off Delay Time
Td(off)
-
41
-
Fall Time
Tf
-
40
-
ns
VDS=15V
ID=1.5A
VGS=15V
RG=3.3
RD=10
Input Capacitance
Ciss
-
800
-
Output Capacitance
Coss
-
460
-
Reverse Transfer Capacitance
Crss
-
215
-
pF
VGS=0V
VDS=20V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
1.2
V
IS=2.3A, VGS=0V, Tj=25 :
Continuous Source Current (Body Diode)
IS
-
2.08
A
VD=VG=0V, VS=1.2V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125 : /W when mounted on Min. copper pad.
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