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参数资料
| 型号： | GSC8107E |
| 厂商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P沟道增强型功率MOSFET |
| 文件页数： | 2/4页 |
| 文件大小： | 303K |
| 代理商： | GSC8107E |
GSC8107E
Page: 2/4
ISSUED DATE :2006/11/02
REVISED DATE :
Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-30
-
V
VGS=0, ID=-10mA
Gate Threshold Voltage
VGS(th)
-0.8
-
-2.0
V
VDS=10, ID=-1mA
Forward Transconductance
gfs
-
31
-
S
VDS=-10V, ID=-6.5A
Gate-Source Leakage Current
IGSS
-
±10
uA
VGS= ±16V
Drain-Source Leakage Current
IDSS
-
-10
uA
VDS=-30V, VGS=0
-
7
VGS=-10V, ID=-6.5A
Static Drain-Source On-Resistance2
RDS(ON)
-
15
m
VGS=-4.5V, ID=-6.5A
Total Gate Charge2
Qg
-
130
-
Gate-Source Charge
Qgs
-
10
-
Gate-Drain (“Miller”) Change
Qgd
-
30
-
nC
ID=-13A
VDS=-24V
VGS=-10V
Turn-on Delay Time2
Td(on)
-
22
-
Rise Time
Tr
-
11
-
Turn-off Delay Time
Td(off)
-
395
-
Fall Time
Tf
-
110
-
ns
VDS=-15V
ID=-6.5A
VGS=-10V
RG=4.7
RL=2.3
Input Capacitance
Ciss
-
5880
-
Output Capacitance
Coss
-
1000
-
Reverse Transfer Capacitance
Crss
-
1050
-
pF
VGS=0V
VDS=-10V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
-1.2
V
IS=-13A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125 /W when mounted on Min. copper pad.
:
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