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参数资料
| 型号： | GSC9406 |
| 厂商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N沟道增强型功率MOSFET |
| 文件页数： | 1/4页 |
| 文件大小： | 294K |
| 代理商： | GSC9406 |
GSC9406
Page: 1/4
ISSUED DATE :2006/01/10
REVISED DATE :
G
G S
S C
C 99440066
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GSC9406 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Low On-resistance
*Fast Switching Characteristic
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
5.80
6.20
M
0.10
0.25
B
4.80
5.00
H
0.35
0.49
C
3.80
4.00
L
1.35
1.75
D
0°
8°
J
0.375 REF.
E
0.40
0.90
K
45°
F
0.19
0.25
G
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current3
ID @TA=25 :
9
A
Continuous Drain Current3
ID @TA=70 :
7.5
A
Pulsed Drain Current1
IDM
50
A
Total Power Dissipation
PD @TA=25 :
2.5
W
Linear Derating Factor
0.02
W/ :
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3
Max.
Rthj-amb
50
: /W
BVDSS
30V
RDS(ON)
18m
ID
9A
Pb Free Plating Product
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| GSC9410 | 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| GSC9435 | 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC9435M | 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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