参数资料
型号: GSC9985
厂商: GTM CORPORATION
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: N沟道增强型功率MOSFET
文件页数: 2/5页
文件大小: 305K
代理商: GSC9985
GE15N03
Page: 2/5
ISSUED DATE :2005/01/25
REVISED DATE :
Electrical Characteristics(Tj = 25
Unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
V
VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
0.037
-
V/ :
Reference to 25 : , ID=1mA
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V
VDS=VGS, ID=250uA
Gate-Source Leakage Current
IGSS
-
D100
nA
VGS= D20V
Drain-Source Leakage Current(Tj=25 : )
-
25
uA
VDS=30V, VGS=0
Drain-Source Leakage Current(Tj=150 : )
IDSS
-
250
uA
VDS=24V, VGS=0
-
80
VGS=10V, ID=8A
Static Drain-Source On-Resistance
RDS(ON)
-
100
m
VGS=4.5V, ID=6A
Total Gate Charge2
Qg
-
5.4
-
Gate-Source Charge
Qgs
-
1.3
-
Gate-Drain (“Miller”) Change
Qgd
-
3.6
-
nC
ID=8A
VDS=24V
VGS=5V
Turn-on Delay Time2
Td(on)
-
3.6
-
Rise Time
Tr
-
19.8
-
Turn-off Delay Time
Td(off)
-
13
-
Fall Time
Tf
-
3.2
-
ns
VDS=15V
ID=8A
VGS=10V
RG=3.3
RD=1.9
Input Capacitance
Ciss
-
260
-
Output Capacitance
Coss
-
144
-
Reverse Transfer Capacitance
Crss
-
13
-
pF
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
1.3
V
IS=15A, VGS=0V, Tj=25 :
Continuous Source Current(Body Diode)
IS
-
15
A
VD= VG=0V, VS=1.3V
Pulsed Source Current(Body Diode)
1
ISM
-
50
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
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