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参数资料
| 型号： | GSD1857 |
| 厂商： | GTM CORPORATION |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶体管 |
| 文件页数： | 1/1页 |
| 文件大小： | 131K |
| 代理商： | GSD1857 |
GSD1857
Page: 1/1
ISSUED DATE :2003/10/22
REVISED DATE :2004/11/29B
L
e 1
b
e
S E A T IN G
P L A N E
b 1
A
D
C
S 1
E
TO-92
G
G S
S D
D 11885577
N
N P
P N
N E
E P
P II T
T A
A X
X II A
A LL P
P LL A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
POWER TRANSISTOR
FEATURES
*High breakdown voltage. (BVCEO=120V).
*Low collector output capacitance. (Type.20pF at VCB=10V)
*High transition frequency. (fT=80MHz)
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
4.45
4.7
D
4.44
4.7
S1
1.02
-
E
3.30
3.81
b
0.36
0.51
L
12.70
-
b1
0.36
0.76
e1
1.150
1.390
C
0.36
0.51
e
2.42
2.66
Absolute Maximum Ratings (Ta = 25 :::: )
Parameter
Ratings
Unit
Collector to Base Voltage
VCBO
120
V
Collector to Emitter Voltage
VCEO
120
V
Emitter to Base Voltage
VEBO
5
V
Collect Current(DC)
IC
2
A
Collect Current*(Pulse)
ICP
3
A
Junction Temperature
Tj
+150
Storage Temperature Range
TsTG
-55 ~ +150
Total Power Dissipation
PD
1
W
Electrical Characteristics (Ta = 25 :::: )
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
120
-
V
IC=50uA
BVCEO
120
-
V
IC=1mA
BVEBO
5
-
V
IE=50uA
ICBO
-
1
uA
VCB=100V
IEBO
-
1
uA
VBE=4V
*VCE(sat)
-
400
mV
lC=1A,IB=100mA
hFE
82
-
390
VCE=5V,IC=0.1A
fT
-
80
-
MHz
VCE=5V,IE=100mA, f=30MHz
Cob
-
20
-
pF
VCB=10V, IE=0A,f=1MHz
Classification Of hFE1
*Measured using pulse current.
Rank
P
Q
R
Range
82-180
120-270
180-390
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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