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参数资料
| 型号： | GSMBD2004 |
| 厂商： | GTM CORPORATION |
| 英文描述： | SURFACE MOUNT, SWITCHING DIODE |
| 中文描述： | 表面贴装，开关二极管 |
| 文件页数： | 1/2页 |
| 文件大小： | 235K |
| 代理商： | GSMBD2004 |
GSMBD2004
Page: 1/2
ISSUED DATE :2005/12/23
REVISED DATE :
G
G S
S M
M B
B D
D 22000044
S U R F A C E M O U N T, S W I T C H I N G D I O D E
V O L T A G E 3 0 0 V, C U R R E N T 0 . 2 2 5 A
Description
The GSMBD2004 is designed for ultra high speed switching.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
Absolute Maximum Ratings (At TA = 25 : unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Repetitive Peak Reverse Voltage
VRRM
300
V
Continuous reverse voltage
VR(VRWM)
240
V
RMS Reverse Voltage
VR(RMS)
170
V
Forward Continuous Current
IFM
225
mA
4
Non-Repetitive Peak Forward surge Current @Tp =1.0us
@Tp=1.0s
IFSM
1
A
Typical Junction Capacitance between Terminal (Note1)
CJ
5.0
pF
Max. Reverse Recovery Time (Note2)
TRR
50
nSec
Power Dissipation
PD
350
mW
Thermal Resistance Junction to Ambient Air
R JA
357
/W
:
Operation and Storage Temperature Range
TJ, TSTG
-65 ~ +150
:
Electrical Characteristics (At TA = 25 : unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
BVR
300
-
V
IR=100uA
0.85
V
IF=20mA
-
1
V
IF=100mA
Forward Voltage
VF
-
1.25
V
IF=225mA
100
nA
VR=240V, TA=25 :
Reverse Current
IR
-
100
uA
VR=240V, TA=150 :
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volts.
2. Measured at applied forward current of 30mA, reverse current of 30mA, RL=100 and recovery to IRR=-3mA.
3. ESD sensitive product handling required.
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