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参数资料
| 型号： | GSMBT2014 |
| 厂商： | GTM CORPORATION |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 进步党外延平面晶体管 |
| 文件页数： | 1/2页 |
| 文件大小： | 211K |
| 代理商： | GSMBT2014 |
1/2
ISSUED DATE :2005/07/22
REVISED DATE :
G
G S
S M
M B
B T
T 22001144
P
P N
N P
P E
E P
P II T
T A
A X
X II A
A L
L P
P L
L A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GSMBT2014 is designed for general purpose switching and amplifier applications.
Features
&Excellent hFE Linearity : hFE (0.1mA)/ hFE (2mA)=0.95 (Typ.)
&Complementary to GSMBT4075
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55~+150
Collector to Base Voltage
VCBO
-50
V
Collector to Emitter Voltage
VCEO
-50
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current
IC
-150
mA
Base Current
IB
-30
mA
Total Power Dissipation
PD
225
mW
Electrical Characteristics (Ta = 25 )
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-50
-
V
IC=-100uA , IE=0
BVCEO
-50
-
V
IC=-1mA, IB=0
BVEBO
-5
-
V
IE=-10uA ,IC=0
ICBO
-
-100
nA
VCB=-50V, IE=0
IEBO
-
-100
nA
VEB=-5V, IC=0
*VCE(sat)
-
-300
mV
IC=-100mA, IB=-10mA
*VBE(sat)
-
-1.1
V
IC=-100mA, IB=-10mA
*hFE1
70
-
400
VCE=-6V, IC=-2mA
*hFE2
25
-
VCE=-6V, IC=-150mA
fT
80
-
MHz
VCE=-10V, IC=-1mA, f=100MHz
Cob
-
7
pF
VCB=-10V, IE=0, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Classification Of hFE1
Rank
SO
SY
SG
Range
70 - 140
120 - 240
200 - 400
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相关代理商/技术参数 |
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|---|---|
| GSMBT2222A | 制造商:GTM 制造商全称:GTM 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| GSMBT2907A | 制造商:GTM 制造商全称:GTM 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| GSMBT3904 | 制造商:GTM 制造商全称:GTM 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| GSMBT3906 | 制造商:GTM 制造商全称:GTM 功能描述:PNP EPITAXIAL PLANAR TRANSISTOR |
| GSMBT4075 | 制造商:GTM 制造商全称:GTM 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
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