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参数资料
| 型号： | GSMBT2907A |
| 厂商： | GTM CORPORATION |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶体管 |
| 文件页数： | 1/2页 |
| 文件大小： | 157K |
| 代理商： | GSMBT2907A |
CORPORATION
1/2
ISSUED DATE :2004/12/22
REVISED DATE :
GSM BT2907A
P
P N
N P
P E
E P
P II T
T A
A X
X II A
A L
L P
P L
L A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GSMBT2907A is designed for general purpose amplifier and high speed, medium-power switching applications.
Features
&Low collector saturation voltage
&High speed switching
&For complementary use with NPN type GSMBT2222A
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Collector to Base Voltage at Ta=25 :
VCBO
-60
V
Collector to Emitter Voltage at Ta=25 :
VCEO
-60
V
Emitter to Base Voltage at Ta=25 :
VEBO
-5
V
Collector Current at Ta=25 :
IC
-600
mA
Total Power Dissipation at Ta=25 :
PD
225
mW
Characteristics at Ta = 25 ::::
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-60
-
V
IC=-10uA
BVCEO
-60
-
V
IC=-10mA
BVEBO
-5
-
V
IE=-10uA
ICBO
-
-10
nA
VCE=-50V
ICEX
-
-50
nA
VCE=-30V, VBE=-0.5V
*VCE(sat)1
-
-0.2
-0.4
V
IC=-150mA, IB=-15mA
*VCE(sat)2
-
-0.5
-1.6
V
IC=-500mA, IB=-50mA
*VBE(sat)1
-
-1.3
mV
IC=-150mA, IB=-15mA
*VBE(sat)2
-
-2.6
V
IC=-500mA, IB=-50mA
*hFE1
75
-
VCE=-10V, IC=-0.1mA
*hFE2
100
-
VCE=-10V, IC=-1mA
*hFE3
100
-
VCE=-10V, IC=-10mA
*hFE4
100
180
300
VCE=-10V, IC=-150mA
*hFE5
50
-
VCE=-10V, IC=-500mA
fT
200
-
MHz
VCE=-20V, IC=-50mA, f=100MHz
Cob
-
8.0
pF
VCE=-10V, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
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