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参数资料
| 型号： | GSMBT3906 |
| 厂商： | GTM CORPORATION |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 进步党外延平面晶体管 |
| 文件页数： | 1/2页 |
| 文件大小： | 167K |
| 代理商： | GSMBT3906 |
1/2
ISSUED DATE :2005/06/08
REVISED DATE :
G
G S
S M
M B
B T
T 33990066
P
P N
N P
P E
E P
P II T
T A
A X
X II A
A L
L P
P L
L A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GSMBT3906 is designed for general purpose switching and amplifier applications.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
-40
V
Collector to Emitter Voltage
VCEO
-40
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current
IC
-200
mA
Total Power Dissipation
PD
300
mW
Characteristics at Ta = 25 ::::
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
V
IC=-10uA
BVCEO
-40
-
V
IC=-10mA
BVEBO
-5
-
V
IE=-10uA
ICES
-
-50
nA
VCB=-30V
IEBO
-
-50
nA
VEB=-3V
VCE(sat)1
-
-0.25
V
IC=-10mA, IB=-1mA
VCE(sat)2
-
-0.4
V
IC=-50mA, IB=-5mA
VBE(sat)1
-0.65
-
-0.85
V
IC=-10mA, IB=-1mA
VBE(sat)2
-
-0.95
V
IC=-50mA, IB=-5mA
hFE1
60
-
VCE=-1V, IC=-0.1mA
hFE2
80
-
VCE=-1V, IC=-1mA
hFE3
100
-
300
VCE=-1V, IC=-10mA
hFE4
60
-
VCE=-1V, IC=-50mA
hFE5
30
-
VCE=-1V, IC=-100mA
fT
250
-
MHz
VCE=-20V, IE=-10mA, f=100MHz
Cob
-
4.5
pF
VCB=-10V, f=100KHz
Cib
-
10
pF
VEB=-0.5V, f=100KHz
td
-
35
ns
VCC=-3V, VBE(OFF)=-0.5V, IC=-10mA, IB1=-1mA
tr
-
35
ns
VCC=-3V, VBE(OFF)=-0.5V, IC=-10mA, IB1=-1mA
tstg
-
225
ns
VCC=-3V, IC=-10mA, IB1=-IB2=-1mA
tf
-
75
ns
VCC=-3V, IC=-10mA, IB1=-IB2=-1mA
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