参数资料
型号: GSMBT4403
厂商: GTM CORPORATION
英文描述: PNP EPITAXIAL PLANAR TRANSISTOR
中文描述: 进步党外延平面晶体管
文件页数: 1/2页
文件大小: 165K
代理商: GSMBT4403
CORPORATION
1/2
ISSUED DATE :2004/12/20
REVISED DATE :
GSM BT4403
P
P N
N P
P E
E P
P II T
T A
A X
X II A
A L
L P
P L
L A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GSMBT4403 is designed for general purpose switching and amplifier applications.
Features
&Complementary to GSMBT4401
&High DC Current Gain: 100-300 at 150mA
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Collector to Base Voltage at Ta=25 :
VCBO
-40
V
Collector to Emitter Voltage at Ta=25 :
VCEO
-40
V
Emitter to Base Voltage at Ta=25 :
VEBO
-5
V
Collector Current at Ta=25 :
IC
-600
mA
Total Power Dissipation at Ta=25 :
PD
225
mW
Characteristics at Ta = 25 ::::
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
V
IC=-100uA
BVCEO
-40
-
V
IC=-1mA
BVEBO
-5
-
V
IE=-10uA
ICEX
-
-100
nA
VCE=-35V, VBE=-0.4V
*VCE(sat)1
-
-400
mV
IC=-150mA, IB=-15mA
*VCE(sat)2
-
-750
mV
IC=-500mA, IB=-50mA
*VBE(sat)1
-
-950
mV
IC=-150mA, IB=-15mA
*VBE(sat)2
-
-1.3
V
IC=-500mA, IB=-50mA
*hFE1
30
-
VCE=-1V, IC=-0.1mA
*hFE2
60
-
VCE=-1V, IC=-1mA
*hFE3
100
-
VCE=-1V, IC=-10mA
*hFE4
100
-
300
VCE=-2V, IC=-150mA
*hFE5
20
-
VCE=-2V, IC=-500mA
fT
200
-
MHz
VCE=-10V, IC=-20mA, f=100MHz
Cob
-
8.5
pF
VCE=-10V, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
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