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参数资料
| 型号： | GSMBT4401 |
| 厂商： | GTM CORPORATION |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶体管 |
| 文件页数： | 1/2页 |
| 文件大小： | 164K |
| 代理商： | GSMBT4401 |
CORPORATION
1/2
ISSUED DATE :2004/12/20
REVISED DATE :
GSM BT4401
N
N P
P N
N E
E P
P II T
T A
A X
X II A
A L
L P
P L
L A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GSMBT4401 is designed for general purpose switching and amplifier applications.
Features
&Complementary to GSMBT4403
&High DC Current Gain: 100-300 at 150mA
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Collector to Base Voltage at Ta=25 :
VCBO
60
V
Collector to Emitter Voltage at Ta=25 :
VCEO
40
V
Emitter to Base Voltage at Ta=25 :
VEBO
6
V
Collector Current at Ta=25 :
IC
600
mA
Total Power Dissipation at Ta=25 :
PD
250
mW
Characteristics at Ta = 25 ::::
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
60
-
V
IC=100uA
BVCEO
40
-
V
IC=1mA
BVEBO
6
-
V
IE=10uA
ICEX
-
100
nA
VCE=35V, VBE= 0.4V
*VCE(sat)1
-
400
mV
IC=150mA, IB=15mA
*VCE(sat)2
-
750
mV
IC=500mA, IB=50mA
*VBE(sat)1
-
950
mV
IC=150mA, IB=15mA
*VBE(sat)2
-
1.2
V
IC=500mA, IB=50mA
*hFE1
20
-
VCE=1V, IC=0.1mA
*hFE2
40
-
VCE=1V, IC=1mA
*hFE3
80
-
VCE=1V, IC=10mA
*hFE4
100
-
300
VCE=1V, IC=150mA
*hFE5
40
-
VCE=2V, IC=500mA
fT
250
-
MHz
VCE=10V, IC=20mA, f=100MHz
Cob
-
6.5
pF
VCB=5V, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
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相关代理商/技术参数 |
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| GSMBT4403 | 制造商:GTM 制造商全称:GTM 功能描述:PNP EPITAXIAL PLANAR TRANSISTOR |
| GSMBT5089 | 制造商:GTM 制造商全称:GTM 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
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| GSMBT5551 | 制造商:GTM 制造商全称:GTM 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| GSMBT8050 | 制造商:GTM 制造商全称:GTM 功能描述:NPN EPITAXIAL TRANSISTOR |
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