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参数资料
| 型号： | GSMBTA94 |
| 厂商： | GTM CORPORATION |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 进步党外延平面晶体管 |
| 文件页数： | 1/2页 |
| 文件大小： | 200K |
| 代理商： | GSMBTA94 |
GSMBTA94
Page: 1/2
ISSUED DATE :2005/08/31
REVISED DATE :
G
G S
S M
M B
B T
TA
A9944
P
P N
N P
P E
E P
P II T
T A
A X
X II A
A L
L P
P L
L A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GSMBTA94 is designed for application requires high voltage.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55~+150
Collector to Base Voltage
VCBO
-400
V
Collector to Emitter Voltage
VCEO
-400
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current
IC
-300
mA
Total Power Dissipation
PD
350
mW
Electrical Characteristics(Ta = 25 : ,unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-400
-
V
IC=-100uA, IE=0
BVCEO
-400
-
V
IC=-1mA, IB=0
BVEBO
-6
-
V
IE=-10uA, IC=0
ICBO
-
-100
nA
VCB=-200V, IE=0
IEBO
-
-100
nA
VEB=-3V, IC=0
*VCE(sat)1
-
-350
mV
IC=-1mA, IB=-0.1mA
*VCE(sat)2
-
-500
mV
IC=-20mA, IB=-2mA
*VCE(sat)3
-
-750
mV
IC=-50mA, IB=-5mA
*VBE(sat)
-
-750
mV
IC=-10mA, IB=-1mA
*hFE1
40
-
VCE=-10V, IC=-1mA
*hFE2
50
-
VCE=-10V, IC=-10mA
*hFE3
45
-
VCE=-10V, IC=-50mA
*hFE4
40
-
VCE=-10V, IC=-100mA
Cob
-
6
pF
VCB=-10V, IE=0, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
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