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参数资料
| 型号： | GSS4565 |
| 厂商： | GTM CORPORATION |
| 元件分类： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N沟道的PowerTrench MOSFET的 |
| 文件页数： | 1/7页 |
| 文件大小： | 572K |
| 代理商： | GSS4565 |
GSS4565
Page: 1/7
ISSUED DATE :2005/07/27
REVISED DATE :2005/09/29B
G
G S
S S
S 44556655
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GSS4565 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Performance
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
5.80
6.20
M
0.10
0.25
B
4.80
5.00
H
0.35
0.49
C
3.80
4.00
L
1.35
1.75
D
0 C
8 C
J
0.375 REF.
E
0.40
0.90
K
45 C
F
0.19
0.25
G
1.27 TYP.
Absolute Maximum Ratings
Ratings
Parameter
Symbol
N-channel P-channel
Unit
Drain-Source Voltage
VDS
40
-40
V
Gate-Source Voltage
VGS
f 20
V
Continuous Drain Current3
ID @TA=25 :
7.6
-6.5
A
Continuous Drain Current3
ID @TA=70 :
6
-5.2
A
Pulsed Drain Current1
IDM
30
-30
A
Total Power Dissipation
PD @TA=25 :
2.0
W
Linear Derating Factor
0.016
W/
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3
Max.
Rthj-a
62.5
/W
Pb Free Plating Product
N-CH BVDSS
40V
N-CH RDS(ON) 25m
N-CH ID
7.6A
P-CH BVDSS
-40V
N-CH RDS(ON) 33m
N-CH ID
-6.5A
相关PDF资料 |
PDF描述 |
|---|---|
| GSS4569 | 30V N-Channel PowerTrench MOSFET |
| GSS4575 | 30V N-Channel PowerTrench MOSFET |
| GSS4816S | DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE |
| GSS4913 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS4920 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GSS4569 | 制造商:GTM 制造商全称:GTM 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS4575 | 制造商:GTM 制造商全称:GTM 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS-4-7-G S/C W/HOLE .385 OAL | 功能描述:触点探头 HEADED 37 DEG 3 SIDE CHISEL RoHS:否 制造商:IDI 类型:Probes 尖端类型:Spherical Radius 长度:8.26 mm 电流额定值:10 A 弹力:2.3 oz 行程:1.52 mm 系列:101050 |
| GSS4816S | 制造商:GTM 制造商全称:GTM 功能描述:DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE |
| GSS4913 | 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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