- 您现在的位置：买卖IC网 > PDF目录60670 > GSS9971 (GTM CORPORATION) N-CHANNEL ENHANCEMENT MODE POWER MOSFET PDF资料下载
参数资料
| 型号： | GSS9971 |
| 厂商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N沟道增强型功率MOSFET |
| 文件页数： | 2/4页 |
| 文件大小： | 342K |
| 代理商： | GSS9971 |
GSS9971
Page: 2/4
ISSUED DATE :2005/10/14
REVISED DATE :
Electrical Characteristics(Tj = 25
Unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
60
-
V
VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
0.06
-
V/ :
Reference to 25 , I
:
D=1mA
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V
VDS=VGS, ID=250uA
Forward Transconductance
gfs
-
7
-
S
VDS=10V, ID=5A
Gate-Source Leakage Current
IGSS
-
±100
nA
VGS= ±25V
Drain-Source Leakage Current(Tj=25 )
:
-
1
uA
VDS=60V, VGS=0
Drain-Source Leakage Current(Tj=70 )
:
IDSS
-
25
uA
VDS=48V, VGS=0
-
50
VGS=10V, ID=5A
Static Drain-Source On-Resistance2
RDS(ON)
-
60
m
VGS=4.5V, ID=2.5A
Total Gate Charge2
Qg
-
32.5
-
Gate-Source Charge
Qgs
-
4.9
-
Gate-Drain (“Miller”) Change
Qgd
-
8.8
-
nC
ID=5A
VDS=48V
VGS=10V
Turn-on Delay Time2
Td(on)
-
9.6
-
Rise Time
Tr
-
10
-
Turn-off Delay Time
Td(off)
-
30
-
Fall Time
Tf
-
5.5
-
ns
VDS=30V
ID=5A
VGS=10V
RG=3.3
RD=6
Input Capacitance
Ciss
-
1658
-
Output Capacitance
Coss
-
156
-
Reverse Transfer Capacitance
Crss
-
109
-
pF
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
1.2
V
IS=1.6A, VGS=0V
Reverse Recovery Time
Trr
-
29.2
-
ns
Reverse Recovery Charge
Qrr
-
48
-
nC
IS=5A, VGS=0V
dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 135 : /W when mounted on Min. copper pad.
相关PDF资料 |
PDF描述 |
|---|---|
| GSS9973 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS9975 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS9980 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSX-200 | SM Watch Crystal |
| GSX-218 | SM Watch Crystal |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GSS9973 | 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS9975 | 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS9980 | 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSSA 200 | 制造商:Hirschmann 功能描述:Bulk |
| GSSA 200 + GSSA 300-5 | 制造商:Belden Inc 功能描述:GSSA 200 + GSSA 300-5 |
发布紧急采购，3分钟左右您将得到回复。