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参数资料
| 型号： | GT30J322 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 30 A, 600 V, N-CHANNEL IGBT |
| 封装： | LEAD FREE, 2-16F1A, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 415K |
| 代理商： | GT30J322 |
GT30J322
2010-08-06
1
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT30J322
FOURTH-GENERATION IGBT
CURRENT RESONANCE INVERTER SWITCHING
APPLICATIONS
FRD included between emitter and collector
Enhancement mode type
High speed
: tf = 0.25μs (Typ.) (IC = 50A)
Low saturation voltage
: VCE (sat) = 2.1V (Typ.) (IC = 50A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
CollectorEmitter Voltage
VCES
600
V
GateEmitter Voltage
VGES
±20
V
DC
IC
30
Collector Current
1ms
ICP
100
A
DC
IF
30
EmitterCollector Forward
Current
1ms
IFP
60
A
Collector Power Dissipation
(Tc = 25°C)
PC
75
W
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
EQUIVALENT CIRCUIT
MARKING
Note1: A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and electronic equipment.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16F1A
Weight: 5.8 g (typ.)
GT30J322
TOSHIBA
Lot No.
Note1
Part No. (or abbreviation code)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| GT30J322(Q) | 制造商:Toshiba America Electronic Components 功能描述:IGBT; N-Channel; 600V; 30A 制造商:Toshiba America Electronic Components 功能描述:TRANS IGBT CHIP N-CH 600V 30A 3PIN TO-3P(N)IS - Rail/Tube |
| GT30J324 | 制造商:Toshiba America Electronic Components 功能描述:TRANS IGBT CHIP N-CH 600V 30A 3PIN TO-3P(N) - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:IGBT 600V TO-3P(N) 制造商:Toshiba America Electronic Components 功能描述:IGBT, 600V, TO-3P(N) 制造商:Toshiba America Electronic Components 功能描述:IGBT, 600V, TO-3P(N), Transistor Type:IGBT, DC Collector Current:30A, Collector |
| GT30J324(Q) | 制造商:Toshiba America Electronic Components 功能描述:X35 PB-F IGBT / TRANSISTOR TO-3PN MOQ=50 V=600 F=60HZ - Bulk 制造商:Toshiba America Electronic Components 功能描述:IGBT DUAL 600V 30A TO-3PN |
| GT30J324_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel IGBT High Power Switching Applications |
| GT30J341 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Discrete IGBTs Silicon N-Channel IGBT |
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