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参数资料
| 型号： | GT30J322 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 30 A, 600 V, N-CHANNEL IGBT |
| 封装： | LEAD FREE, 2-16F1A, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 415K |
| 代理商： | GT30J322 |
GT30J322
2010-08-06
2
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Gate Leakage Current
IGES
VGE = ±20V, VCE = 0
―
±500
nA
Collector CutOff Current
ICES
VCE = 600V, VGE = 0
―
1.0
mA
GateEmitter CutOff Voltage
VGE (OFF)
IC = 50mA, VCE = 5V
3.0
―
6.0
V
CollectorEmitter Saturation Voltage
VCE (sat)
IC = 50A, VGE = 15V
―
2.1
2.8
V
Input Capacitance
Cies
VCE = 10V, VGE = 0, f = 1MHz
―
2500
―
pF
Rise Time
tr
―
0.20
―
TurnOn Time
ton
―
0.30
―
Fall Time
tf
―
0.25
0.40
Switching Time
TurnOff Time
toff
―
0.40
―
μs
Peak Forward Voltage
VF
IF = 30A, VGE = 0
―
2.0
V
Reverse Recovery Time
trr
IF = 30A, VGE = 0
di / dt = 100A / μs
―
0.2
μs
Thermal Resistance (IGBT)
Rth (jc)
―
1.67
°C / W
Thermal Resistance (Diode)
Rth (jc)
―
2.27
°C / W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| GT30J322(Q) | 制造商:Toshiba America Electronic Components 功能描述:IGBT; N-Channel; 600V; 30A 制造商:Toshiba America Electronic Components 功能描述:TRANS IGBT CHIP N-CH 600V 30A 3PIN TO-3P(N)IS - Rail/Tube |
| GT30J324 | 制造商:Toshiba America Electronic Components 功能描述:TRANS IGBT CHIP N-CH 600V 30A 3PIN TO-3P(N) - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:IGBT 600V TO-3P(N) 制造商:Toshiba America Electronic Components 功能描述:IGBT, 600V, TO-3P(N) 制造商:Toshiba America Electronic Components 功能描述:IGBT, 600V, TO-3P(N), Transistor Type:IGBT, DC Collector Current:30A, Collector |
| GT30J324(Q) | 制造商:Toshiba America Electronic Components 功能描述:X35 PB-F IGBT / TRANSISTOR TO-3PN MOQ=50 V=600 F=60HZ - Bulk 制造商:Toshiba America Electronic Components 功能描述:IGBT DUAL 600V 30A TO-3PN |
| GT30J324_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel IGBT High Power Switching Applications |
| GT30J341 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Discrete IGBTs Silicon N-Channel IGBT |
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