- 您现在的位置：买卖IC网 > PDF目录60672 > GT6924E (GTM CORPORATION) N-CHANNEL MOSFET WITH SWITCHING DIODE PDF资料下载
参数资料
| 型号： | GT6924E |
| 厂商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL MOSFET WITH SWITCHING DIODE |
| 中文描述： | N沟道MOSFET的开关，其开关二极管 |
| 文件页数： | 2/4页 |
| 文件大小： | 287K |
| 代理商： | GT6924E |
GT6924E
Page: 2/4
ISSUED DATE :2006/01/25
REVISED DATE :
Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
-
V
VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
0.02
-
V/ :
Reference to 25 , I
:
D=1mA
Gate Threshold Voltage
VGS(th)
0.5
-
1.2
V
VDS=VGS, ID=250uA
Forward Transconductance
gfs
-
1
-
S
VDS=5V, ID=600mA
Gate-Source Leakage Current
IGSS
-
±10
uA
VGS= ± 6V
Drain-Source Leakage Current(Tj=25 )
:
-
1
uA
VDS=20V, VGS=0
Drain-Source Leakage Current(Tj=70 )
:
IDSS
-
10
uA
VDS=16V, VGS=0
-
600
VGS=4.5V, ID=1A
Static Drain-Source On-Resistance
RDS(ON)
-
850
m
VGS=2.5V, ID=0.5A
Total Gate Charge2
Qg
-
1.3
2
Gate-Source Charge
Qgs
-
0.3
-
Gate-Drain (“Miller”) Change
Qgd
-
0.5
-
nC
ID=600mA
VDS=16V
VGS=4.5V
Turn-on Delay Time2
Td(on)
-
21
-
Rise Time
Tr
-
53
-
Turn-off Delay Time
Td(off)
-
100
-
Fall Time
Tf
-
125
-
Ns
VDS=10V
ID=600mA
VGS=5V
RG=3.3
RD=16.7
Input Capacitance
Ciss
-
38
60
Output Capacitance
Coss
-
17
-
Reverse Transfer Capacitance
Crss
-
12
-
pF
VGS=0V
VDS=10V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
1.2
V
IS=750mA, VGS=0V
Schottky Characteristics (Tj = 25 :::: )
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward Voltage Drop
VF
-
0.5
V
IF=500mA
Maximum Reverse Leakage Current
IRM
-
100
uA
VR=20V
Junction Capacitance
CT
-
21
-
pF
VR=10V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad.
:
相关PDF资料 |
PDF描述 |
|---|---|
| GTC217E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GTC220E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GTC9922E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GTC9926E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GTC9926 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GT6A-24-M2PCW-03B1-(21 | 制造商:Japan Aviation Electronics (JAE) 功能描述: |
| GT6A-24-M2SC-03B1-(21) | 制造商:Japan Aviation Electronics (JAE) 功能描述: |
| GT6L-28-M12SC-53B1-(25)-R | 制造商:Japan Aviation Electronics (JAE) 功能描述:GT6L-28-M12SC-53B1-(25)-R |
| GT6W-2P/S-6R | 制造商:HRS 制造商全称:HRS 功能描述:Interface Portions and In-line Portions of the Various Units and Devices |
| GT6W-2PP-HU | 制造商:HRS 制造商全称:HRS 功能描述:Interface Portions and In-line Portions of the Various Units and Devices |
发布紧急采购，3分钟左右您将得到回复。