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参数资料
| 型号： | GTT2602 |
| 厂商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N沟道增强型功率MOSFET |
| 文件页数： | 1/4页 |
| 文件大小： | 289K |
| 代理商： | GTT2602 |
1/4
ISSUED DATE :2006/03/28
REVISED DATE :
G
G T
T T
T 22660022
N
N -- C
C H
H A
A N
N N
N E
E L
L E
E N
N H
H A
A N
N C
C E
E M
M E
E N
N T
T M
M O
O D
D E
E P
P O
O W
W E
E R
R M
M O
O S
S F
F E
E T
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Description
The GTT2602 utilized advanced processing techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
The GTT2602 is universally used for all commercial-industrial applications.
Features
*Capable of 2.5V gate drive
*Low on-resistance
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
1.10 MAX.
L
0.45 REF.
A1
0
0.10
L1
0.60 REF.
A2
0.70
1.00
0°
10°
c
0.12 REF.
b
0.30
0.50
D
2.70
3.10
e
0.95 REF.
E
2.60
3.00
e1
1.90 REF.
E1
1.40
1.80
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current3, VGS@4.5V
ID @TA=25 :
6.3
A
Continuous Drain Current3, VGS@4.5V
ID @TA=70 :
5
A
Pulsed Drain Current1,2
IDM
30
A
Power Dissipation
PD @TA=25 :
2
W
Linear Derating Factor
0.016
W/ :
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3 Max.
Rthj-a
62.5
: /W
BVDSS
20V
RDS(ON)
34m
ID
6.3A
Pb Free Plating Product
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| GTT2603 | 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GTT2604 | 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GTT2605 | 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GTT2610 | 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GTT2623 | 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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