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参数资料
| 型号： | GTT8205S |
| 厂商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N沟道增强型功率MOSFET |
| 文件页数： | 1/4页 |
| 文件大小： | 338K |
| 代理商： | GTT8205S |
GTT8205S
Page: 1/4
ISSUED DATE :2006/07/19
REVISED DATE :2006/11/09B
G
G T
T T
T 88220055S
S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GTT8205S provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
The TSSOP-6 package is universally used for all commercial-industrial surface mount applications.
Features
* Low on-resistance
*Capable of 2.5V gate drive
*Low drive current
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
1.10 MAX.
L
0.45 REF.
A1
0
0.10
L1
0.60 REF.
A2
0.70
1.00
0°
10°
c
0.12 REF.
b
0.30
0.50
D
2.70
3.10
e
0.95 REF.
E
2.60
3.00
e1
1.90 REF.
E1
1.40
1.80
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±8
V
Continuous Drain Current3, VGS@4.5V
ID @TA=25 :
6
A
Continuous Drain Current3, VGS@4.5V
ID @TA=70 :
4.8
A
Pulsed Drain Current1
IDM
20
A
Total Power Dissipation
PD @TA=25 :
1.14
W
Linear Derating Factor
0.01
W/ :
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3
Max.
Rthj-a
110
/
: W
Pb Free Plating Product
BVDSS
20V
RDS(ON)
28m
ID
6A
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