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参数资料
| 型号： | GTT8205S |
| 厂商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N沟道增强型功率MOSFET |
| 文件页数： | 2/4页 |
| 文件大小： | 338K |
| 代理商： | GTT8205S |
GTT8205S
Page: 2/4
ISSUED DATE :2006/07/19
REVISED DATE :2006/11/09B
Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
-
V
VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
0.03
-
V/ :
Reference to 25 , I
:
D=1mA
Gate Threshold Voltage
VGS(th)
0.5
-
1.5
V
VDS=VGS, ID=250uA
Forward Transconductance
gfs
-
20
-
S
VDS=10V, ID=6A
Gate-Source Leakage Current
IGSS
-
±100
nA
VGS= ±8V
Drain-Source Leakage Current(Tj=25 )
:
-
1
uA
VDS=20V, VGS=0
Drain-Source Leakage Current(Tj=70 )
:
IDSS
-
25
uA
VDS=16V, VGS=0
-
28
VGS=4.5V, ID=6.0A
Static Drain-Source On-Resistance2
RDS(ON)
-
38
m
VGS=2.5V, ID=5.2A
Total Gate Charge2
Qg
-
23
-
Gate-Source Charge
Qgs
-
4.5
-
Gate-Drain (“Miller”) Change
Qgd
-
7
-
nC
ID=6A
VDS=20V
VGS=5V
Turn-on Delay Time2
Td(on)
-
30
-
Rise Time
Tr
-
70
-
Turn-off Delay Time
Td(off)
-
40
-
Fall Time
Tf
-
65
-
ns
VDS=10V
ID=1A
VGS=5V
RG=6
RD=10
Input Capacitance
Ciss
-
1035
-
Output Capacitance
Coss
-
320
-
Reverse Transfer Capacitance
Crss
-
150
-
pF
VGS=0V
VDS=20V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
1.2
V
IS=1.7A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad.
:
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