参数资料
型号: GU60N03
厂商: GTM CORPORATION
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: N沟道增强型功率MOSFET
文件页数: 1/5页
文件大小: 296K
代理商: GU60N03
GU60N03
Page: 1/5
ISSUED DATE :2005/01/25
REVISED DATE :2005/10/19B
G
G U
U 6600N
N 0033
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GU60N03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage application such as DC/DC converters and high efficiency switching circuit.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
4.40
4.80
c2
1.25
1.45
b
0.76
1.00
b2
1.17
1.47
L4
0.00
0.30 B D
8.6
9.0
c
0.36
0.5
e
2.54 REF.
L3
1.50 REF.
L
14.6
15.8
L1
2.29
2.79
0
8
E
9.80
10.4
L2
1.27 REF.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current, VGS@10V
ID @TC=25 :
55
A
Continuous Drain Current, VGS@10V
ID @TC=100 :
35
A
Pulsed Drain Current1
IDM
215
A
Total Power Dissipation
PD @TC=25 :
62.5
W
Linear Derating Factor
0.5
W/ :
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-case
Max.
Rthj-c
2.0
: /W
Thermal Resistance Junction-ambient
Max.
Rthj-a
62
/
: W
BVDSS
30V
RDS(ON)
16.5m
ID
55A
Pb Free Plating Product
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