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参数资料
| 型号： | GU70N03 |
| 厂商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N沟道增强型功率MOSFET |
| 文件页数： | 1/5页 |
| 文件大小： | 343K |
| 代理商： | GU70N03 |
GU70N03
Page: 1/5
ISSUED DATE :2005/02/25
REVISED DATE :
G
G U
U 7700N
N 0033
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GU70N03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
4.40
4.80
c2
1.25
1.45
b
0.76
1.00
b2
1.17
1.47
L4
0.00
0.30 B D
8.6
9.0
c
0.36
0.5
e
2.54 REF.
L3
1.50 REF.
L
14.6
15.8
L1
2.29
2.79
0
8
E
9.80
10.4
L2
1.27 REF.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
f 20
V
Continuous Drain Current , VGS@10V
ID @TC=25 :
70
A
Continuous Drain Current , VGS@10V
ID @TC=100 :
45
A
Pulsed Drain Current1
IDM
275
A
Total Power Dissipation
PD @TC=25 :
69
W
Linear Derating Factor
0.55
W/
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-case
Max.
Rthj-c
1.8
/W
Thermal Resistance Junction-ambient
Max.
Rthj-a
62
/W
BVDSS
30V
RDS(ON)
9m
ID
70A
Pb Free Plating Product
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PDF描述 |
|---|---|
| GU70T03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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相关代理商/技术参数 |
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|---|---|
| GU70T03 | 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GU75N07 | 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GU7805A | 制造商:GTM 制造商全称:GTM 功能描述:3-TERMINAL POSITIVE VOLTAGE REGULATORS |
| GU7806A | 制造商:GTM 制造商全称:GTM 功能描述:3-TERMINAL POSITIVE VOLTAGE REGULATORS |
| GU7808A | 制造商:GTM 制造商全称:GTM 功能描述:3-TERMINAL POSITIVE VOLTAGE REGULATORS |
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