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参数资料
| 型号： | H11AV2VM |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | OPTOCOUPLER TRANS-OUT VDE 6-DIP |
| 标准包装： | 1,000 |
| 通道数： | 1 |
| 输入类型： | DC |
| 电压 - 隔离： | 7500Vpk |
| 电流传输比（最小值）： | 50% @ 10mA |
| 输出电压： | 70V |
| 电流 - DC 正向(If)： | 60mA |
| Vce饱和（最大）： | 400mV |
| 输出类型： | 有基极的晶体管 |
| 安装类型： | 通孔 |
| 封装/外壳： | 6-DIP（0.300"，7.62mm） |
| 包装： | 管件 |
Absolute Maximum Ratings (T A = 25°C unless otherwise specified.)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Value
Units
TOTAL DEVICE
T STG
T OPR
T SOL
P D
Storage Temperature
Operating Temperature
Wave Solder Temperature (see page 8 for re?ow solder pro?les)
Total Device Power Dissipation @ T A = 25°C
Derate above 25°C
-40 to +150
-40 to +100
260 for 10 sec
250
2.94
°C
°C
°C
mW
mW/°C
EMITTER
I F
V R
P D
DC / Average Forward Input Current
Reverse Input Voltage
LED Power Dissipation @ T A = 25°C
Derate above 25°C
60
6
120
1.41
mA
V
mW
mW/°C
DETECTOR
V CEO
V CBO
V ECO
P D
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Detector Power Dissipation @ T A = 25°C
Derate above 25°C
70
70
7
150
1.76
V
V
V
mW
mW/°C
?2005 Fairchild Semiconductor Corporation
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2
2
www.fairchildsemi.com
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