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参数资料
| 型号： | H11AV2VM |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | OPTOCOUPLER TRANS-OUT VDE 6-DIP |
| 标准包装： | 1,000 |
| 通道数： | 1 |
| 输入类型： | DC |
| 电压 - 隔离： | 7500Vpk |
| 电流传输比（最小值）： | 50% @ 10mA |
| 输出电压： | 70V |
| 电流 - DC 正向(If)： | 60mA |
| Vce饱和（最大）： | 400mV |
| 输出类型： | 有基极的晶体管 |
| 安装类型： | 通孔 |
| 封装/外壳： | 6-DIP（0.300"，7.62mm） |
| 包装： | 管件 |
Electrical Characteristics (T A = 25°C unless otherwise speci?ed.)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.*
Max.
Unit
EMITTER
V F
Input Forward Voltage (I F = 10mA)
T A = 25°C
0.8
1.18
1.5
V
T A = -55°C
T A = 100°C
0.9
0.7
1.28
1.05
1.7
1.4
I R
Reverse Leakage Current
V R = 6.0V
10
μA
DETECTOR
BV CEO
BV CBO
BV ECO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
I C = 1.0mA, I F = 0
I C = 100μA, I F = 0
I E = 100μA, I F = 0
70
70
7
100
120
10
V
V
V
I CEO
I CBO
C CE
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance
V CE = 10V, I F = 0
V CB = 10V
V CE = 0V, f = 1MHz
1
0.5
8
50
nA
nA
pF
Transfer Characteristics
Symbol
Parameter
Test Conditions
Device
Min.
Typ.*
Max.
Unit
DC CHARACTERISTIC
CTR
Current Transfer Ratio,
I F = 10mA, V CE = 10V
H11AV1M
100
300
%
Collector to Emitter
H11AV1AM
H11AV2M
H11AV2AM
50
V CE (SAT) Collector-Emitter
I C = 2mA, I F = 20mA
All
0.4
V
Saturation Voltage
AC CHARACTERISTIC
T ON
T ON
Non-Saturated Turn-on
Time
Non Saturated Turn-off
Time
I C = 2mA, V CC = 10V,
R L = 100 ? (Fig. 11)
I C = 2mA, V CC = 10V,
R L = 100 ? (Fig. 11)
All
All
15
15
μs
μs
Isolation Characteristics
Symbol
V ISO
C ISO
R ISO
Parameters
Input-Output Isolation Voltage
Isolation Capacitance
Isolation Resistance
Test Conditions
f = 60Hz, t = 1 sec.
V I-O = 0V, f = 1MHz
V I-O = 500 VDC
Min.
7500
10 11
Typ.*
0.2
Max.
2
Units
V AC(pk)
pF
?
*Typical values at T A = 25°C
?2005 Fairchild Semiconductor Corporation
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2
3
www.fairchildsemi.com
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